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DTS5212 - Dual N-Channel MOSFET

Datasheet Summary

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET.
  • 100 % Rg Tested.
  • Compliant to RoHS Directive 2002/95/EC D1 D2 S1 1 G1 2 6 D1 5 G2 D2 3 4 S2 Top View G1 G2 S1 S2.

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Datasheet preview – DTS5212

Datasheet Details

Part number DTS5212
Manufacturer Din-Tek
File Size 625.81 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet DTS5212 Datasheet
Additional preview pages of the DTS5212 datasheet.

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Full PDF Text Transcription

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Dual N-Channel 20 V (D-S) MOSFET DTS5212 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.310at VGS = 4.5 V 0.433at VGS = 2.5 V SOT-563 ID (A)a 1.2a 0.9a Qg (Typ.) 1.5 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC D1 D2 S1 1 G1 2 6 D1 5 G2 D2 3 4 S2 Top View G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM PD TJ, Tstg Limit 20 ± 12 1.2a 0.
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