DTS6401 Description
Power MOSFET DTS6401 .din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 60 VGS = - 10 V 12 3.8 5.1 Single 0.053.
DTS6401 Key Features
- Isolated Package
- High Voltage Isolation = 2.5 kVRMS (t = 60 s
- Sink to Lead Creepage Distance = 4.8 mm
- P-Channel
- 175 °C Operating Temperature
- Dynamic dV/dt Rating
- Low Thermal Resistance
- Lead (Pb)-free Available