Datasheet4U Logo Datasheet4U.com

DTS6504 - N-Channel MOSFET

Datasheet Summary

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET.
  • Low On-Resistance.
  • 100 % Rg Tested.
  • Compliant to RoHS Directive 2002/95/EC.

📥 Download Datasheet

Datasheet preview – DTS6504

Datasheet Details

Part number DTS6504
Manufacturer Din-Tek
File Size 317.67 KB
Description N-Channel MOSFET
Datasheet download datasheet DTS6504 Datasheet
Additional preview pages of the DTS6504 datasheet.

📁 Similar Datasheet

  • DTS-2 - (DTSxx) Round Button (Diptronics)
  • DTS-3 - (DTSxx) Round Button (Diptronics)
  • DTS-430 - Diode Transistor (ETC)
  • DTS-6 - (DTSxx) Round Button (Diptronics)
  • DTS-65K - (DTSxx) Round Button (Diptronics)
  • DTS-6xx - (DTSxx) Round Button (Diptronics)
  • DTS-xx - Transfer Switch (KDI)
  • DTS2319 - P-Channel MOSFET (VBsemi)
  • DTS430 - Diode Transistor (ETC)
  • DTSA-6 - (DTSxx) Round Button (Diptronics)
Other Datasheets by Din-Tek

Full PDF Text Transcription

Click to expand full text
N-Channel 30 V (D-S) MOSFET DTS6504 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () 0.030 at VGS = 10 V 30 0.040 at VGS = 4.5 V ID (A)a, e 6 6 Qg (Typ.) 4.2 nC SOT-363 SC-70 (6-LEADS) D1 6D D2 5D G3 4S Top View FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM 30 ± 20 6e 6e 5.5b, c 4.
Published: |