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Dual N-Channel MOSFET
DTS8203
www.din-tek.jp
PRODUCT SUMMARY
VDS (V) 20
RDS(on) (Ω) 0.012 at VGS = 4.5 V 0.015 at VGS = 2.5 V
ID (A) 7.6 6.5
FEATURES
• Halogen-free Option Available • TrenchFET® Power MOSFETs
Pb-free Available
RoHS*
COMPLIANT
TSOP6 Top View
S1 D1/D2
S2
16 25 34
G1 D1/D2 G2
DD
G1 G2 S1 S2
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
7.6 7.3 6.5 5.5
Pulsed Drain Current
IDM 30
Continuous Source Current (Diode Conduction)a
IS 5.5 5.0
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
PD
1.8 1.8 0.96 0.
DTS8203 Datasheet
