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D56/
www.daysemi.jp
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) (Ω) 0.0051 at VGS = 10 V 0.0063 at VGS = 4.5 V ID (A) 55d 55d Qg (Typ.) 21.7
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
D
TO-252
• Power Supply - Secondary Synchronous Rectification • DC/DC Converter
G
G
D
S
S N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Single Avalanche Energy
a
Symbol VDS VGS TC = 25 °C TC = 70 °C ID IDM IAS L = 0.1 mH TC = 25 °C TA = 25 °C
c
Limit 30 ± 20 55d 55d 100 40 80 59.
DTU09N03 Datasheet
