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DTU09N03 - N-Channel MOSFET

Download the DTU09N03 datasheet PDF. This datasheet also covers the DTU09N03_Din variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET.
  • 100 % Rg and UIS Tested.
  • Compliant to RoHS Directive 2002/95/EC.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (DTU09N03_Din-Tek.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number DTU09N03
Manufacturer Din-Tek
File Size 336.05 KB
Description N-Channel MOSFET
Datasheet download datasheet DTU09N03 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
D56/ www.daysemi.jp N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0051 at VGS = 10 V 0.0063 at VGS = 4.5 V ID (A) 55d 55d Qg (Typ.) 21.7 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS D TO-252 • Power Supply - Secondary Synchronous Rectification • DC/DC Converter G G D S S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Single Avalanche Energy a Symbol VDS VGS TC = 25 °C TC = 70 °C ID IDM IAS L = 0.1 mH TC = 25 °C TA = 25 °C c Limit 30 ± 20 55d 55d 100 40 80 59.