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N-Channel 200 V (D-S) MOSFET
DTU18N20BS
www.din-tek.jp
PRODUCT SUMMARY
VDS (V) 200
RDS(on) () 0.180 at VGS = 10 V 0.255 at VGS = 4.5 V
ID (A) 18 10
TO-252 Pin Configuration
FEATURES
• DT-Trench Power MOSFET • 100 % Rgand UIS Tested • 175 °C Junction Temperature
APPLICATIONS • DC/DC Converters • DC/AC Inverters • Motor Drives
D
DS G
Top View
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (t = 300 µs) Avalanche Current Single Avalanche Energya Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TC = 25 °C TC = 70 °C
L = 0.1 mH TC = 25 °C TA = 25 °Cc
VDS VGS
ID
IDM IAS EAS
PD
TJ, Tstg
Limit 200 ± 20 18 7.
DTU18N20BS Datasheet
