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N-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 60
RDS(on) () 0.026 at VGS = 10 V 0.031 at VGS = 4.5 V
ID (A)a 50 50
FEATURES
• 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:
DTU50N06
www.din-tek.jp
TO-252
D
GDS Top View
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C TC = 100 °C
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)
IS
Avalanche Current
IAS
Single Avalanche Energy (Duty Cycle 1 %)
L = 0.1 mH
EAS
Maximum Power Dissipation
TC = 25 °C TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit ± 20 50 50a 150 50a 50 125 136 3b, 8.
DTU50N06 Datasheet
