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P-Channel 30 V (D-S) MOSFET
DTU80P03
www.din-tek.jp
PRODUCT SUMMARY
VDS (V) - 30
RDS(on) () 0.008 at VGS = - 10 V 0.012 at VGS = - 4.5 V
ID (A)a - 80 - 60
FEATURES • Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
TO-252 Pin Configuration
DS G Top View
S G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Gate-Source Voltage
Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current
TC = 25 °C TC = 125 °C
Avalanche Current Repetitive Avalanche Energyb
L = 0.