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BS817 - P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

Key Features

  • High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly G E D G H K J L M SOT-23 A D TOP VIEW S B C Dim A B C D E G H J K L M Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076 Max 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 0.178 Mechanical Data.
  • Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal.

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BS817 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features · · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly G E D G H K J L M SOT-23 A D TOP VIEW S B C Dim A B C D E G H J K L M Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076 Max 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 0.178 Mechanical Data · · · · · Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections (see Diagram) Marking: S17 Weight: 0.008 grams (approx.