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BS817 - P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

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Diodes Incorporated

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BS817 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR by Diodes Incorporated - Datasheet Preview — Datasheet preview – BS817

Datasheet Details

Part number	BS817
Manufacturer	DIODES Incorporated
File Size	58.70 KB
Description	P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
Datasheet	BS817 Datasheet
Additional preview pages of the BS817 datasheet.

Product details

Features

High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly G E D G H K J L M SOT-23 A D TOP VIEW S B C Dim A B C D E G H J K L M Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076 Max 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 0.178 Mechanical Data.
Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal.

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Other Datasheets by Diodes Incorporated

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Published: Mar 23, 2005 |