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DMN2112SN - N-Channel FET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Notebook computers Portable phones PCMCIA cards and battery powered circ

Key Features

  • Low On-Resistance.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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Full PDF Text Transcription for DMN2112SN (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMN2112SN. For precise diagrams, and layout, please refer to the original PDF.

NEW PRODUCT NOT RECOMMENDED FOR NEW DESIGN CONTACT US DMN2112SN N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 20V RDS(ON) MAX 0.10Ω @ VGS = 4.5...

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ECT TRANSISTOR Product Summary BVDSS 20V RDS(ON) MAX 0.10Ω @ VGS = 4.5V 0.14Ω @ VGS = 2.5V 0.25Ω @ VGS = 1.5V ID TA = +25°C 1.2A 0.5A 0.1A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications  Notebook computers  Portable phones  PCMCIA cards and battery powered circuits Features  Low On-Resistance  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applicati

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