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DMN21D2UFB - 20V N-CHANNEL MOSFET

General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

General Purpose Interfacing Switch Power Management Functions

Key Features

  • Low On-Resistance Very low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Switching Speed Ultra-Small Surface Mount Package 1mm x 0.6mm Low Package Profile, 0.5mm Maximum Package height ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability.

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Full PDF Text Transcription for DMN21D2UFB (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMN21D2UFB. For precise diagrams, and layout, please refer to the original PDF.

DMN21D2UFB 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT ADVANCE INFORMATION ADVANCE INFORMATION V(BR)DSS RDS(ON) max 0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = ...

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ANCE INFORMATION V(BR)DSS RDS(ON) max 0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5V 20V 2.4Ω @ VGS = 1.8V 3.0Ω @ VGS = 1.5V 500mA 350mA ID max TA = 25°C 760mA 700mA Features and Benefits • • • • • • • • • • Low On-Resistance Very low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Switching Speed Ultra-Small Surface Mount Package 1mm x 0.6mm Low Package Profile, 0.5mm Maximum Package height ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

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