Datasheet4U Logo Datasheet4U.com

DMN5L06TK - N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Datasheet Summary

Features

  • Low On-Resistance.
  • Very Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
  • ESD Protected Up To 2kV.
  • Halogen and Antimony Free. “Green” Device (Note 3) .
  • Qualified to AEC-Q101 standards for High Reliability Mechanical Data.
  • Case: SOT523.
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flamma.

📥 Download Datasheet

Datasheet preview – DMN5L06TK

Datasheet Details

Part number DMN5L06TK
Manufacturer DIODES Incorporated
File Size 158.74 KB
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Datasheet download datasheet DMN5L06TK Datasheet
Additional preview pages of the DMN5L06TK datasheet.
Other Datasheets by Diodes Incorporated

Full PDF Text Transcription

Click to expand full text
  Green DMN5L06TK N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • ESD Protected Up To 2kV • Halogen and Antimony Free. “Green” Device (Note 3)  • Qualified to AEC-Q101 standards for High Reliability Mechanical Data • Case: SOT523 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 e3 • Terminal Connections: See Diagram • Weight: 0.
Published: |