Datasheet Summary
NEW PRODUCT
Product Summary
BVDSS 30V
RDS(ON)
4.2Ω @ VGS = 4.5V 2.8Ω @ VGS = 10V
ID TA = +25°C
200mA 260mA
Description
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
- DC-DC Converters
- Power Management Functions
- Battery Operated Systems and Solid-State Relays
- Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
SOT363 (Standard)
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
- Dual N-Channel MOSFET
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
-...
