Datasheet Summary
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -30V
RDS(ON) MAX
45m @ VGS = -10V 65m @ VGS = -4.5V
ID TA = +25°C
-4.3A -3.3A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
- General Purpose Interfacing Switch
- Power Management Functions
- Analog Switch
Features
- Low Gate Threshold Voltage
- Low On-Resistance
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- Qualified to AEC-Q101 Standards for High Reliability
- PPAP...
