DT014 Description
DT014 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR.
DT014 Key Features
- High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Tr
- 10° 0.254 10°
- SOT-223 Plastic Case Terminal Connections: See Outline Drawing and Internal Circuit Diagram Above
- 155 60 15 10 64 10 10 5.0 1.2 2.0
- 3.0 0.18 2.0 4.0 0.2
- V W m VDS = VGS, ID = 250µA VGS = 10V, ID = 1.6A VDS = 25V, ID = 1.6A BVDSS IDSS IGSSF IGSSR 60
- Forward Current Max Pulsed Drain-Source Diode ISM
- Forward Current Drain-Source Diode Forward Voltage VSD
- 0.95 (Note 2)