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HBDM60V600W - COMPLEX TRANSISTOR ARRAY

Key Features

  • Epitaxial Planar Die Construction.
  • Lead Free By Design/RoHS Compliant (Note 1).
  • "Green" Device (Note 2) Sub-Component P/N MMBT2907A_DIE MMBTA06_DIE Reference Q1 Q2 Device Type PNP Transistor NPN Transistor Mechanical Data.
  • Case: SOT-363.
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0.
  • Moisture Sensitivity: Level 1 per J-STD-020D.
  • Terminal Connections: See Schematic & Pin Con.

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HBDM60V600W COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Features • Epitaxial Planar Die Construction • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) Sub-Component P/N MMBT2907A_DIE MMBTA06_DIE Reference Q1 Q2 Device Type PNP Transistor NPN Transistor Mechanical Data • Case: SOT-363 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminal Connections: See Schematic & Pin Configuration • Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 6 • Ordering Information: See Page 6 • Weight: 0.