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2DB1182Q - 32V PNP MEDIUM POWER TRANSISTOR

Key Features

  • BVCEO > -32V.
  • IC = -2A High Continuous Collector Current.
  • ICM = -3A Peak Pulse Current.
  • Epitaxial Planar Die Construction.
  • Low Collector-Emitter Saturation Voltage.
  • Ideal for Medium Power Switching or Amplification.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features  BVCEO > -32V  IC = -2A High Continuous Collector Current  ICM = -3A Peak Pulse Current  Epitaxial Planar Die Construction  Low Collector-Emitter Saturation Voltage  Ideal for Medium Power Switching or Amplification Applications  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability 2DB1182Q 32V PNP MEDIUM POWER TRANSISTOR IN TO252 Mechanical Data  Case: TO252 (DPAK)  Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 e3  Weight: 0.