Diodes Incorporated 2N7002-01
N-channel FET
| Part No. | 2N7002-01 |
|---|---|
| Datasheet | 2N7002-01 Download |
| Manufacturer |  Diodes Incorporated |
| Description | N-channel FET |
| Buy | Stock & Price |
FEATURES
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● Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage G E D G H K J L M SOT-23 A D TOP VIEW B S C Dim A B C D E G H J K L M Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076 Max 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 0.178
MECHANICAL DATA
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● Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K7A Weight: 0.008 grams (approx.) All Dimensions in mm
MAXIMUM RATINGS
Drain-Source Voltage @ TA = 25°C unless otherwise specified Symbol VDSS VDGR Continuous Pulsed Continuous Continuous @ 100°C Pulsed VGSS ID Pd RqJA Tj, TSTG Value 60 60 ±20 ±40 115 73 800 200 1.60 625 -55 to +150 Units V V V mA mW mW/°C K/W °C Characteristic Drain-Gate Voltage RGS £ 1.0MW Gate-Source Voltage Drain Current (Note 1) Total Power Dissipation (Note 1) Derating above TA = 25°C Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: 1.
