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BCP5316Q - 80V PNP MEDIUM POWER TRANSISTORS

General Description

This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications.

Key Features

  • BVCEO > -80V.
  • IC = -1A High Continuous Collector Current.
  • ICM = -2A Peak Pulse Current.
  • 2W Power Dissipation.
  • Low Saturation Voltage VCE(sat) < -500mV @ -0.5A.
  • Complementary NPN type: BCP5616Q.
  • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • PPAP Capable (Note 4) BCP5316Q 80V PNP MEDIUM POWER.

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Description This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > -80V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat) < -500mV @ -0.5A • Complementary NPN type: BCP5616Q • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • PPAP Capable (Note 4) BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Applications • Medium Power Switching or Amplification Applications • AF Driver and Output Stages Mechanical Data • Case: SOT223 • Case Material: Molded Plastic. “Green” Molding Compound.