Description
This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications.
Features
- BVCEO > -80V.
- IC = -1A High Continuous Collector Current.
- ICM = -2A Peak Pulse Current.
- 2W Power Dissipation.
- Low Saturation Voltage VCE(sat) < -500mV @ -0.5A.
- Complementary NPN type: BCP5616Q.
- Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2).
- Halogen and Antimony Free. “Green” Device (Note 3).
- Qualified to AEC-Q101 Standards for High Reliability.
- PPAP Capable (Note 4)
BCP5316Q
80V PNP MEDIUM POWER.