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BCP5616Q - NPN Transistor

General Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

Key Features

  • BVCEO > 80V.
  • IC = 1A High Continuous Collector Current.
  • ICM = 2A Peak Pulse Current.
  • 2W Power Dissipation.
  • Low Saturation Voltage VCE(sat) < 500mV @ 0.5A.
  • Complementary PNP Type: BCP5316Q.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • PPAP Capable (Note 4) BCP5616Q 80V NPN MEDIUM POWER.

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Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features  BVCEO > 80V  IC = 1A High Continuous Collector Current  ICM = 2A Peak Pulse Current  2W Power Dissipation  Low Saturation Voltage VCE(sat) < 500mV @ 0.5A  Complementary PNP Type: BCP5316Q  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) BCP5616Q 80V NPN MEDIUM POWER TRANSISTOR IN SOT223 Applications  Medium Power Switching or Amplification Applications  AF Driver and Output Stages Mechanical Data  Case: SOT223  Case Material: Molded Plastic. “Green” Molding Compound.