Datasheet4U Logo Datasheet4U.com

BCP5616Q Datasheet NPN Transistor

Manufacturer: Diodes Incorporated

Overview: Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

General Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

Key Features

  • BVCEO > 80V.
  • IC = 1A High Continuous Collector Current.
  • ICM = 2A Peak Pulse Current.
  • 2W Power Dissipation.
  • Low Saturation Voltage VCE(sat) < 500mV @ 0.5A.
  • Complementary PNP Type: BCP5316Q.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • PPAP Capable (Note 4) BCP5616Q 80V NPN MEDIUM POWER.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
STMicroelectronics Logo BCP5616 Low power NPN Transistor STMicroelectronics

More Datasheets from Diodes Incorporated

Part Number Description
BCP56 NPN MEDIUM POWER TRANSISTORS
BCP51 PNP MEDIUM POWER TRANSISTORS
BCP5110TA PNP MEDIUM POWER TRANSISTORS
BCP5116TA PNP MEDIUM POWER TRANSISTORS
BCP5116TC PNP MEDIUM POWER TRANSISTORS
BCP51TA PNP MEDIUM POWER TRANSISTORS
BCP52 PNP MEDIUM POWER TRANSISTORS
BCP5210TA PNP MEDIUM POWER TRANSISTORS
BCP5216TA PNP MEDIUM POWER TRANSISTORS
BCP52TA PNP MEDIUM POWER TRANSISTORS

BCP5616Q Distributor