Description
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.
Features
- BVCEO > 80V.
- IC = 1A High Continuous Collector Current.
- ICM = 2A Peak Pulse Current.
- 2W Power Dissipation.
- Low Saturation Voltage VCE(sat) < 500mV @ 0.5A.
- Complementary PNP Type: BCP5316Q.
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
- Halogen and Antimony Free. “Green” Device (Note 3).
- Qualified to AEC-Q101 Standards for High Reliability.
- PPAP Capable (Note 4)
BCP5616Q
80V NPN MEDIUM POWER.
BCP5616Q Datasheet
