BCX5616Q Overview
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.
BCX5616Q Key Features
- BVCEO > 80V
- Ic = 1A High Continuous Collector Current
- ICM = 2.0A Peak Pulse Current
- Low Saturation Voltage VCE(sat) < 500mV @ 0.5A
- Epitaxial Planar Die Construction
- plementary PNP types: BCX5316Q
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- Qualified to AEC-Q101 Standards for High Reliability
- PPAP Capable (Note 4)