Datasheet4U Logo Datasheet4U.com

BCX5616Q - NPN Transistor

General Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

Key Features

  • BVCEO > 80V.
  • Ic = 1A High Continuous Collector Current.
  • ICM = 2.0A Peak Pulse Current.
  • Low Saturation Voltage VCE(sat) < 500mV @ 0.5A.
  • Epitaxial Planar Die Construction.
  • Complementary PNP types: BCX5316Q.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • PPAP Capable (Note 4) BCX5616Q 80V NPN MEDIUM POWER.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BCX56 NPN Silicon AF Transistor Multicomp
BCX56 Silicon NPN transistor BLUE ROCKET ELECTRONICS
BCX56 NPN medium power transistors NXP
BCX56 SURFACE MOUNT NPN SILICON TRANSISTOR Central Semiconductor Corp
BCX56 NPN Silicon AF Transistors Infineon Technologies AG

Other Datasheets by Diodes Incorporated

Part Number Description
BCX5616TA NPN Medium Power Transistor
BCX5616TC NPN Medium Power Transistor
BCX5610TA NPN Medium Power Transistor
BCX5610TC NPN Medium Power Transistor
BCX56 NPN Medium Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features  BVCEO > 80V  Ic = 1A High Continuous Collector Current  ICM = 2.0A Peak Pulse Current  Low Saturation Voltage VCE(sat) < 500mV @ 0.5A  Epitaxial Planar Die Construction  Complementary PNP types: BCX5316Q  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.