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BCX5616Q - NPN Transistor

Datasheet Summary

Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

Features

  • BVCEO > 80V.
  • Ic = 1A High Continuous Collector Current.
  • ICM = 2.0A Peak Pulse Current.
  • Low Saturation Voltage VCE(sat) < 500mV @ 0.5A.
  • Epitaxial Planar Die Construction.
  • Complementary PNP types: BCX5316Q.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • PPAP Capable (Note 4) BCX5616Q 80V NPN MEDIUM POWER.

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Datasheet preview – BCX5616Q

Datasheet Details

Part number BCX5616Q
Manufacturer DIODES
File Size 457.02 KB
Description NPN Transistor
Datasheet download datasheet BCX5616Q Datasheet
Additional preview pages of the BCX5616Q datasheet.

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Full PDF Text Transcription

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Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features  BVCEO > 80V  Ic = 1A High Continuous Collector Current  ICM = 2.0A Peak Pulse Current  Low Saturation Voltage VCE(sat) < 500mV @ 0.5A  Epitaxial Planar Die Construction  Complementary PNP types: BCX5316Q  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
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