BCX5616Q Datasheet (PDF) Download
Diodes Incorporated
BCX5616Q

Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

Key Features

  • Ic = 1A High Continuous Collector Current
  • ICM = 2.0A Peak Pulse Current
  • Low Saturation Voltage VCE(sat) < 500mV @ 0.5A
  • Epitaxial Planar Die Construction
  • plementary PNP types: BCX5316Q
  • Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability
  • PPAP Capable (Note 4)
  • Case Material: Molded Plastic, “Green” Molding pound

Applications

  • Automotive