Diodes Incorporated BS817
P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
| Part No. | BS817 |
|---|---|
| Datasheet | BS817 Download |
| Manufacturer |  Diodes Incorporated |
| Description | P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR |
| Buy | Stock & Price |
FEATURES
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● High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly G E D G H K J L M SOT-23 A D TOP VIEW S B C Dim A B C D E G H J K L M Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076 Max 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 0.178
MECHANICAL DATA
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● Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections (see Diagram) Marking: S17 Weight: 0.008 grams (approx.) All Dimensions in mm
MAXIMUM RATINGS
Drain-Source Voltage Drain-Gate Voltage @ TA = 25°C unless otherwise specified Symbol -VDSS -VDGS VGS -ID Pd Tj, TSTG Value 200 200 ±20 100 310 -55 to +150 Unit V V V mA mW °C Characteristic Gate-Source Voltage (pulsed) (Note 2) Drain Current (continuous) Power Dissipation @ TC = 50°C (Note 1) Operating and Storage Temperature Range Inverse Diode @ TA = 25°C unless otherwise specified Characteristic Symbol IF VF Value 0.3 0.85 Unit A V Max Forward Current (continuous) Forward Voltage Drop (typical) @ VGS = 0, IF = 0.3A, Tj = 25°C Notes: 1.