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DFBR030U3LP - FULL BRIDGE RECTIFIER

Key Features

  • Dual 30V N-Channel MOSFETs (Q1, Q2) with Dual 3.0A Super Barrier Rectifier Diodes (D1, D2) packaged in a 4.0 x 4.0 x 0.6mm DFN package.
  • Full-Bridge Rectifier Block.
  • Super Barrier Rectifiers (D1, D2).
  • Ultra low forward voltage drop.
  • Patented Super Barrier Rectifier technology.
  • +150°C operating temperature.
  • ±8kV ESD protection (HBM, 3B).
  • ±25kV ESD protection (IEC61000-4-2 Level 4, Air Discharge).
  • N-Channel MOSFET (Q1, Q2).
  • Low On-Resistance to min.

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Full PDF Text Transcription (Reference)

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ADAVDAVNACNECDE IDNIFNOFRORMAMTAITOINON L1_2 L1_1 Features  Dual 30V N-Channel MOSFETs (Q1, Q2) with Dual 3.0A Super Barrier Rectifier Diodes (D1, D2) packaged in a 4.0 x 4.0 x 0.6mm DFN package  Full-Bridge Rectifier Block  Super Barrier Rectifiers (D1, D2)  Ultra low forward voltage drop  Patented Super Barrier Rectifier technology  +150°C operating temperature  ±8kV ESD protection (HBM, 3B)  ±25kV ESD protection (IEC61000-4-2 Level 4, Air Discharge)  N-Channel MOSFET (Q1, Q2)  Low On-Resistance to minimize conduction loss  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) DFBR030U3LP 3.