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DMC1028UFDB - MOSFET

General Description

RDS(ON) max 25mΩ @ VGS = 4.5V 30mΩ @ VGS = 3.3V 32mΩ @ VGS = 2.5V 80mΩ @ VGS = -4.5V 90mΩ @ VGS = -3.3V 100mΩ @ VGS = -2.5V ID max TA = +25°C 6.0A 5.5A 5.3A -3.4A -3.2A -3.0A Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Max Height ESD HBM Protected up to 1.5K

Key Features

  • Device BVDSS Q1 N-Channel 12V Q2 P-Channel -20V.

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DMC1028UFDB Product Summary COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Device BVDSS Q1 N-Channel 12V Q2 P-Channel -20V Description RDS(ON) max 25mΩ @ VGS = 4.5V 30mΩ @ VGS = 3.3V 32mΩ @ VGS = 2.5V 80mΩ @ VGS = -4.5V 90mΩ @ VGS = -3.3V 100mΩ @ VGS = -2.5V ID max TA = +25°C 6.0A 5.5A 5.3A -3.4A -3.2A -3.0A  Low On-Resistance  Low Input Capacitance  Low Profile, 0.6mm Max Height  ESD HBM Protected up to 1.5KV, MM Protected up to 150V.  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.