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DMC2990UDJQ - COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Description

and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Automotive app

Features

  • Low On-Resistance.
  • Very Low Gate Threshold Voltage, 1.0V Max.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Ultra-Small Surface Mount Package 1mm x 1mm.
  • Low Package Profile, 0.45mm Maximum Package Height.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • PPAP Capable (Note 4).

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AADNDVEVAAWNNPCNCEREE IOWIDNNPFUFROCOORTRDMMUAACTTITIOONN DMC2990UDJQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BVDSS Q1 20V Q2 -20V RDS(ON) Max 0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5V 1.8Ω @ VGS = 1.8V 2.4Ω @ VGS = 1.5V 1.9Ω @ VGS = -4.5V 2.4Ω @ VGS = -2.5V 3.4Ω @ VGS = -1.8V 5Ω @ VGS = -1.5V ID Max TA = +25°C 450mA 400mA 330mA 300mA -310mA -280mA -240mA -180mA Features and Benefits  Low On-Resistance  Very Low Gate Threshold Voltage, 1.0V Max  Low Input Capacitance  Fast Switching Speed  Ultra-Small Surface Mount Package 1mm x 1mm  Low Package Profile, 0.45mm Maximum Package Height  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2)  Halogen and Antimony Free.
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