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DMC6070LND - MOSFET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Power Management Functions Analog Switch Mechanical Data Case: POWERDI

Key Features

  • ID max TA = +25°C 3.1A 2.7A -2.4A -1.8A.
  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Complementary Pair MOSFET.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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A D VNAEN CWEPDRIONDFUOCRTM A T I O N Product Summary Device Q1 Q2 V(BR)DSS 60V -60V RDS(ON) max 85mΩ @ VGS = 10V 120mΩ @ VGS = 4.5V 150mΩ @ VGS = -10V 250mΩ @ VGS = -4.5V DMC6070LND COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET POWERDI® Features ID max TA = +25°C 3.1A 2.7A -2.4A -1.8A  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Complementary Pair MOSFET  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.