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DMG2302UQ - N-CHANNEL MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

General Purpose Interfacing Switch Power Management Functions Boost Application

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • PPAP Capable (Note 4) Mechanical Data.
  • Case: SOT23.
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0.
  • Moisture Sensitivity: Level 1 per J-ST.

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Full PDF Text Transcription for DMG2302UQ (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMG2302UQ. For precise diagrams, and layout, please refer to the original PDF.

Product Summary BVDSS 20V RDS(ON) max 90mΩ @ VGS = 4.5V 120mΩ @ VGS = 2.5V ID max TA = +25°C 4.2A 2.7A Description and Applications This MOSFET is designed to minimize th...

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7A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.  General Purpose Interfacing Switch  Power Management Functions  Boost Application  Analog Switch DMG2302UQ N-CHANNEL ENHANCEMENT MODE MOSFET Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.

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