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DMG3418L - N-Channel MOSFET

General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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Full PDF Text Transcription for DMG3418L (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMG3418L. For precise diagrams, and layout, please refer to the original PDF.

ADAVDAVANCNECDE ID INFNFORORMAMTAITIOONN DMG3418L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) Max 60mΩ @ VGS = 10V 70mΩ @ VGS = 4.5V ID TA = +25°C...

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BVDSS 30V RDS(ON) Max 60mΩ @ VGS = 10V 70mΩ @ VGS = 4.5V ID TA = +25°C 4A 3A Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facil

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