DMG3N60SJ3
Description
and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Key Features
- Low On-Resistance
- High BVDSS Rating for Power Application
- Low Input Capacitance
- Lead-Free Finish; RoHS pliant (Notes 1 &
- Halogen and Antimony Free. “Green” Device (Note
- Case Material: Molded Plastic, “Green” Molding pound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Connections: See Diagram
- Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208
- Weight: 0.33 grams (Approximate) TO251 (Type TH) Top View Bottom View GDS Top View Internal Schematic
