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DMG3N60SJ3
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS (@ TJ Max)
650V
RDS(ON) Max 3.5Ω @ VGS = 10V
ID @TC = +25°C
2.8A
Description and Applications
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Motor Control Backlighting DC-DC Converters Power Management Functions
Features and Benefits
Low On-Resistance High BVDSS Rating for Power Application Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control
(i.e.