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DMG4413LSS - 30V P-CHANNEL ENHANCEMENT MODE MOSFET

General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Case: SO-8 Case Material: Molded Plastic, "

Key Features

  • Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS compliant (Note 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMG4413LSS 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -30V RDS(ON) max 7.5mΩ @ VGS = -10V 10.2mΩ @ VGS = -4.5V ID max TA = +25°C -12A -10A Features and Benefits       Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS compliant (Note 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description NEW PRODUCT This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data       Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound.