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DMG4800LSD - Dual N-Channel MOSFET

General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Backlighting Power Management Functions DC-DC Converters SO-8 Top View DM

Key Features

  • 100% avalanche rated part.
  • Low RDS(on) - minimizes conduction losses.
  • Low Qg - minimizes switching losses.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 standards for High Reliability.
  • PPAP Capable (Note 4) Mechanical Data.
  • Case: SO-8.
  • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0.
  • Moisture Sensitivity: Level.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Summary V(BR)DSS 30V RDS(on) max 16mΩ @ VGS = 10V 22mΩ @ VGS = 4.5V ID max TA = +25°C 9.8A 8.4A Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Backlighting  Power Management Functions  DC-DC Converters SO-8 Top View DMG4800LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  100% avalanche rated part  Low RDS(on) - minimizes conduction losses  Low Qg - minimizes switching losses  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.