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DMG4932LSD Datasheet Asymetrical Dual N-channel Enhancement Mode MOSFET

Manufacturer: Diodes Incorporated

Overview: NOT REMENDED FOR NEW DESIGN NO ALTERNATE PART DMG4932LSD ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE.

DMG4932LSD datasheet preview

Datasheet Details

Part number	DMG4932LSD
Manufacturer	Diodes Incorporated
File Size	486.16 KB
Description	ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet	DMG4932LSD-Diodes.pdf

Key Features

High Density UMOS with Schottky Barrier Diode.
Low Leakage Current at High Temp.
High Conversion Efficiency.
Low On-Resistance.
Low Input Capacitance.
Fast Switching Speed.
Utilizes Diodes Incorporated’s Monolithic DIOFET Technology to Increase Conversion Efficiency.
100% UIS and Rg Tested.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
Qualified to AEC-Q101 Standards for High Re.

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DMG4932LSD Distributor