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DMG4N60SJ3 - N-Channel MOSFET

Datasheet Summary

Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Motor Control Backlighting DC-DC Converters Power Man

Features

  • Low On-Resistance.
  • High BVDSS Rating for Power.

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Datasheet preview – DMG4N60SJ3

Datasheet Details

Part number DMG4N60SJ3
Manufacturer DIODES
File Size 595.49 KB
Description N-Channel MOSFET
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NEW PRODUCT DMG4N60SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS (@ TJ Max) 650V RDS(ON) Max 2.5 @ VGS = 10V ID TC = +25°C 3.0A Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Motor Control  Backlighting  DC-DC Converters  Power Management Functions Features and Benefits  Low On-Resistance  High BVDSS Rating for Power Application  Low Input Capacitance  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data  Case: TO251 and TO251 (Type TH)  Case Material: Molded Plastic, “Green” Molding Compound.
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