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DMG4N60SJ3 - N-Channel MOSFET

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Motor Control Backlighting DC-DC Converters Power Man

Key Features

  • Low On-Resistance.
  • High BVDSS Rating for Power.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NEW PRODUCT DMG4N60SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS (@ TJ Max) 650V RDS(ON) Max 2.5 @ VGS = 10V ID TC = +25°C 3.0A Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Motor Control  Backlighting  DC-DC Converters  Power Management Functions Features and Benefits  Low On-Resistance  High BVDSS Rating for Power Application  Low Input Capacitance  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data  Case: TO251 and TO251 (Type TH)  Case Material: Molded Plastic, “Green” Molding Compound.