DMG4N60SJ3
DMG4N60SJ3 is N-Channel MOSFET manufactured by Diodes Incorporated.
NEW PRODUCT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS (@ TJ Max) 650V
RDS(ON) Max 2.5 @ VGS = 10V
ID TC = +25°C
3.0A
Description and Applications
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Motor Control
- Backlighting
- DC-DC Converters
- Power Management Functions
Features and Benefits
- Low On-Resistance
- High BVDSS Rating for Power Application
- Low Input Capacitance
- Lead-Free Finish; Ro HS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
- Case: TO251 and TO251 (Type TH)
- Case Material: Molded Plastic, “Green” Molding pound.
UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Connections: See Diagram
- Terminals: Finish
- Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
- Weight: 0.33 grams (Approximate)
TO251 and TO251 (Type...
