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DMG5802LFX Datasheet Dual N-channel MOSFET

Manufacturer: Diodes Incorporated

Overview: DMG5802LFX DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 24V RDS(ON) 15mΩ @ VGS = 4.5V 20mΩ @ VGS = 2.5V ID TA = +25°C 6.5A 5.

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Applications  DC-DC Converters  Power management functions

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • ESD Protected up to 3kV.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: W-DFN5020-6.
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0.
  • Moisture Sensitivity: Level 1.

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