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DMG5802LFX - Dual N-Channel MOSFET

Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

DC-DC Converters Power management functions

Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • ESD Protected up to 3kV.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: W-DFN5020-6.
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0.
  • Moisture Sensitivity: Level 1.

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Datasheet Details

Part number DMG5802LFX
Manufacturer DIODES
File Size 227.59 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet DMG5802LFX Datasheet
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DMG5802LFX DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 24V RDS(ON) 15mΩ @ VGS = 4.5V 20mΩ @ VGS = 2.5V ID TA = +25°C 6.5A 5.6A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  DC-DC Converters  Power management functions Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected up to 3kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
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