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DMG6301UDW - Dual N-Channel MOSFET

Description

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

DC-DC Converters Power Management Functions Batte

Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Small Surface Mount Package.
  • ESD Protected Gate (>6kV Human Body Model).
  • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3) .
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: SOT363.
  • Case Material: Molded Plastic. UL Flammabi.

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Datasheet Details

Part number DMG6301UDW
Manufacturer DIODES
File Size 262.64 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet DMG6301UDW Datasheet
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NEW PRODUCT DMG6301UDW 25V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 25V RDS(ON) 4Ω @ VGS = 4.5V 5Ω @ VGS = 2.7V ID TA = +25°C 0.24A 0.22A Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
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