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DMG9926UDM - Dual N-Channel MOSFET

Features

  • Low Gate Charge.
  • Low RDS(ON):.
  • 28mΩ @VGS = 4.5V.
  • 32mΩ @VGS = 2.5V.
  • 40mΩ @VGS = 1.8V.
  • Low Input/Output Leakage.
  • Lead Free By Design/RoHS Compliant (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • "Green" Device (Note 4) S1 DMG9926UDM DUAL N-.

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NEW PRODUCT Features • Low Gate Charge • Low RDS(ON): • 28mΩ @VGS = 4.5V • 32mΩ @VGS = 2.5V • 40mΩ @VGS = 1.8V • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • "Green" Device (Note 4) S1 DMG9926UDM DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Mechanical Data • Case: SOT-26 • Case Material - Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Marking Information: See Page 4 • Ordering Information: See Page 4 • Weight: 0.
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