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DMN10H099SFG - N-Channel MOSFET

Description

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Power Management Functions DC-DC Converters Mechanical Data Case: POWERDI333

Features

  • Low RDS(ON).
  • ensures on state losses are minimized.
  • Small form factor thermally efficient package enables higher density end products.
  • Occupies just 33% of the board area occupied by SO-8 enabling smaller end product.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.

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Datasheet preview – DMN10H099SFG

Datasheet Details

Part number DMN10H099SFG
Manufacturer DIODES
File Size 248.79 KB
Description N-Channel MOSFET
Datasheet download datasheet DMN10H099SFG Datasheet
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Full PDF Text Transcription

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ADVANCE INFORMATION DMN10H099SFG 100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary V(BR)DSS 100V RDS(ON) max 80mΩ @ VGS = 10V 99mΩ @ VGS = 6.0V ID max TA = +25°C 4.2A 3.6A Features and Benefits  Low RDS(ON) – ensures on state losses are minimized  Small form factor thermally efficient package enables higher density end products  Occupies just 33% of the board area occupied by SO-8 enabling smaller end product  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
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