DMN10H700S
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Key Features
- BVDSS 100V RDS(ON) 700mΩ @ VGS = 10V 900mΩ @ VGS = 6.0V ID TA = +25°C 0.70A 0.62A
