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DMN2022UNS Datasheet Dual N-channel MOSFET

Manufacturer: Diodes Incorporated

Overview: NEW PRODUCT Product Summary V(BR)DSS 20V RDS(ON) max 10.8m @ VGS = 4.5V 14.5m @ VGS = 2.5V 17.0m @ VGS = 1.8V ID max TA = +25°C 10.7A 9.3A 8.

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Applications  Power Management Functions  Load Switch DMN2022UNS DUAL N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Complementary Pair MOSFET.
  • ESD Protected Up to 2kV.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data.
  • Case:.

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DMN2022UNS Distributor