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DMN2022UNS - DUAL N-CHANNEL MOSFET

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Power Management Functions Load Switch DMN2022UNS DUAL N-CHANNEL EN

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Complementary Pair MOSFET.
  • ESD Protected Up to 2kV.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data.
  • Case:.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NEW PRODUCT Product Summary V(BR)DSS 20V RDS(ON) max 10.8m @ VGS = 4.5V 14.5m @ VGS = 2.5V 17.0m @ VGS = 1.8V ID max TA = +25°C 10.7A 9.3A 8.6A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Power Management Functions  Load Switch DMN2022UNS DUAL N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Complementary Pair MOSFET  ESD Protected Up to 2kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.