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DMN2026UVT - N-CHANNEL MOSFET

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

DC-DC Converters Power Management Functions Backlighting Mechan

Features

  • Low Input Capacitance.
  • Low On-Resistance.
  • Fast Switching Speed.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).

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Full PDF Text Transcription

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ADVANCE INFORMATION NEW PRODUCT DMN2026UVT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(ON) Max 24m @ VGS = 4.5V 32m @ VGS = 2.5V ID TA = +25°C 6.2A Features and Benefits  Low Input Capacitance  Low On-Resistance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  DC-DC Converters  Power Management Functions  Backlighting Mechanical Data  Case: TSOT26  Case Material: Molded Plastic, ―Green‖ Molding Compound.
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