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DMN2170U Datasheet N-channel MOSFET

Manufacturer: Diodes Incorporated

Overview: NEW PRODUCT DMN2170U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT.

Key Features

  • Low On-Resistance.
  • 70mΩ @VGS = 4.5V.
  • 100mΩ @VGS = 2.5V.
  • 170mΩ @VGS = 1.5V.
  • Very Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2, 3 and 6).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • ESD Protected Gate Mechanical Data.
  • Case: SOT-23.
  • Case Material: Molded Plastic, “Green” Molding Com.

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