DMN2170U Description
NEW PRODUCT DMN2170U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR.
DMN2170U Key Features
- Low On-Resistance
- 70mΩ @VGS = 4.5V
- 100mΩ @VGS = 2.5V
- 170mΩ @VGS = 1.5V
- Very Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Lead, Halogen and Antimony Free, RoHS pliant
- Qualified to AEC-Q101 Standards for High Reliability
- ESD Protected Gate