DMN2320UFB4
DMN2320UFB4 is N-Channel MOSFET manufactured by Diodes Incorporated.
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
- Load switch
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
- Footprint of just 0.6mm2
- thirteen times smaller than SOT23
- 0.4mm profile
- ideal for low profile applications
- Low Gate Threshold Voltage
- Fast Switching Speed
- Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- ESD Protected Gate 2KV
Mechanical Data
- Case: X2-DFN1006-3
- Case Material: Molded Plastic, “Green” Molding pound.
UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish
- Ni Pd Au over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4
- Weight: 0.001 grams (Approximate)
X2-DFN1006-3
ESD PROTECTED TO 2k V
Bottom View
Top View Internal Schematic
Gate Protection Diode
Equivalent Circuit
Ordering Information (Note 4)
Part Number DMN2320UFB4-7B
Marking ND
Reel size (inches) 7
Tape width (mm) 8
Quantity per reel...
