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DMN2320UFB4 - N-Channel MOSFET

Description

This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Load switch DMN2320UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features

  • Footprint of just 0.6mm2.
  • thirteen times smaller than SOT23.
  • 0.4mm profile.
  • ideal for low profile.

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Full PDF Text Transcription

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Product Summary V(BR)DSS 20V RDS(on) 320mΩ @ VGS= 4.5V 500mΩ @ VGS= 2.5V 1000mΩ @ VGS= 1.8V ID max TA = +25°C 1.0A 0.65A 0.4A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • Load switch DMN2320UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits • Footprint of just 0.6mm2 – thirteen times smaller than SOT23 • 0.4mm profile – ideal for low profile applications • Low Gate Threshold Voltage • Fast Switching Speed • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free.
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