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DMN2400UFB Datasheet N-CHANNEL MOSFET

Manufacturer: Diodes Incorporated

Overview: Product Summary V(BR)DSS 20V RDS(ON) max 0.55Ω @ VGS = 4.5V 0.75Ω @ VGS = 2.5V ID max TA = +25°C 0.75A 0.

General Description

and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

 Battery Charging  Power Management Functions  DC-DC Converters  Portable Power Adaptors X1-DFN1006-3 DMN2400UFB N-CHANNEL ENHANCEMENT MODE MOSFET

Key Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Ultra-Small Surface Mount Package.
  • ESD Protected up to 1.5kV.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: X1-DFN1006-3.
  • Case Material: Molded Plastic, "Green" Molding Compound; UL F.