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DMN3016LFDE - N-Channel MOSFET

General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Battery Management Application Power Management Functions DC-DC Converter

Key Features

  • 0.6mm Profile.
  • Ideal for Low Profile.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMN3016LFDE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) max 12mΩ @ VGS = 10V 16mΩ @ VGS = 4.5V ID max TA = +25°C 10A 8.5A Features and Benefits  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  Low On-Resistance  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.