DMN3016LFDE
DMN3016LFDE is N-Channel MOSFET manufactured by Diodes Incorporated.
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 30V
RDS(ON) max 12mΩ @ VGS = 10V 16mΩ @ VGS = 4.5V
ID max TA = +25°C
10A
8.5A
Features and Benefits
- 0.6mm Profile
- Ideal for Low Profile Applications
- PCB Footprint of 4mm2
- Low Gate Threshold Voltage
- Low On-Resistance
- Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://.diodes./quality/product-definitions/
Description and Applications
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Battery Management Application
- Power Management Functions
- DC-DC Converters
Mechanical Data
- Case: U-DFN2020-6
- Case Material: Molded Plastic, “Green” Molding pound.
UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish
- Ni Pd Au over Copper Leadframe. Solderable per MIL-STD-202, Method 208
- Weight: 0.0065 grams...
