DMN3018SSS - N-Channel MOSFET

Diodes Incorporated

General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Backlighting Power Management Functions DC-DC Converters Mec

Key Features

Low On-Resistance.
Low Input Capacitance.
Fast Switching Speed.
ESD Protected Gate.
“Green” component and RoHS compliant (Notes 1 & 2).
Qualified to AEC-Q101 standards for High Reliability.

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DMN3018SSS n-channel mosfet by Diodes Incorporated - Datasheet Preview

Datasheet Details

Part number	DMN3018SSS
Manufacturer	Diodes Incorporated
File Size	187.32 KB
Description	N-Channel MOSFET
Datasheet	DMN3018SSS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NEW PRODUCT ADVANCE INFORMATION DMN3018SSS 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) max 21mΩ @ VGS = 10V 35mΩ @ VGS = 4.5V ID max TA = 25°C 7.3A 5.5A Features and Benefits • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • ESD Protected Gate • “Green” component and RoHS compliant (Notes 1 & 2) • Qualified to AEC-Q101 standards for High Reliability Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Backlighting • Power Management Functions • DC-DC Converters Mechanical Data • Case: SO-8 • Case Material: Molded Plastic, "Green" Molding Compound.