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DMN3025LFDF - 30V N-Channel MOSFET

Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

General Purpose Interfacing Switch Power Management Functions U-D

Features

  • 0.6mm Profile.
  • Ideal for Low Profile.

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Full PDF Text Transcription

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ADVANCE INFORMATION Product Summary BVDSS 30V RDS(ON) max 20.5mΩ @ VGS = 10V 30mΩ @ VGS = 4.5V ID max TA = +25°C 8.3A 7.4A DMN3025LFDF 30V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
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