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DMN3150L - N-Channel MOSFET

Key Features

  • Low On-Resistance:.
  • RDS(ON) < 54mΩ @ VGS = 10V.
  • RDS(ON) < 72mΩ @ VGS = 4.5V.
  • RDS(ON) < 115mΩ @ VGS = 2.5V.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: SOT-23.
  • Case Material: Molded Plastic, “Gre.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DMN3150L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features  Low On-Resistance:  RDS(ON) < 54mΩ @ VGS = 10V  RDS(ON) < 72mΩ @ VGS = 4.5V  RDS(ON) < 115mΩ @ VGS = 2.5V  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Mechanical Data  Case: SOT-23  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – Matte Tin annealed over Copper leadframe.