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DMN3150L
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Low On-Resistance: RDS(ON) < 54mΩ @ VGS = 10V RDS(ON) < 72mΩ @ VGS = 4.5V RDS(ON) < 115mΩ @ VGS = 2.5V
Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin annealed over Copper leadframe.