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DMN3190LDW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 30V
RDS(ON) (MAX)
190mΩ @ VGS = 10V 335mΩ @ VGS = 4.5V
Package SOT363
ID (MAX) TA = +25°C
1A 0.75A
Description
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
Motor Control Power Management Functions Load Switch
SOT363
Features and Benefits
Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control
(i.e.