DMN3200U Description
NEW PRODUC YM DMN3200U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR.
DMN3200U Key Features
- Low On-Resistance
- 90mΩ @ VGS = 4.5V
- 110mΩ @ VGS = 2.5V
- 200mΩ @ VGS = 1.5V
- Low Gate Threshold Voltage
- Low Input Capacitance
- ESD Protected Gate
- Fast Switching Speed
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)