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DMN3200U

Manufacturer: Diodes Incorporated

DMN3200U datasheet by Diodes Incorporated.

DMN3200U datasheet preview

DMN3200U Datasheet Details

Part number DMN3200U
Datasheet DMN3200U_Diodes.pdf
File Size 263.44 KB
Manufacturer Diodes Incorporated
Description N-channel Enhancement Mode Field Effect Transistor
DMN3200U page 2 DMN3200U page 3

DMN3200U Overview

NEW PRODUC YM DMN3200U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR.

DMN3200U Key Features

  • Low On-Resistance
  • 90mΩ @ VGS = 4.5V
  • 110mΩ @ VGS = 2.5V
  • 200mΩ @ VGS = 1.5V
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • ESD Protected Gate
  • Fast Switching Speed
  • Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)

DMN3200U-7 from other manufacturers

View DMN3200U-7 datasheet index

Brand Logo Part Number Description Other Manufacturers
VBsemi Logo DMN3200U-7 N-Channel 30V MOSFET VBsemi
Diodes Incorporated logo - Manufacturer

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DMN3200U Distributor

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