Part DMN3200U
Description N-channel Enhancement Mode Field Effect Transistor
Category Transistor
Manufacturer Diodes Incorporated
Size 263.44 KB
Diodes Incorporated

DMN3200U Overview

Key Features

  • Low On-Resistance
  • 90mΩ @ VGS = 4.5V
  • 110mΩ @ VGS = 2.5V
  • 200mΩ @ VGS = 1.5V
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • ESD Protected Gate
  • Fast Switching Speed
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 &
  • Halogen and Antimony Free. “Green” Device (Note