DMN3200U
DMN3200U is manufactured by Diodes Incorporated.
NEW PRODUC YM
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
- Low On-Resistance
- 90mΩ @ VGS = 4.5V
- 110mΩ @ VGS = 2.5V
- 200mΩ @ VGS = 1.5V
- Low Gate Threshold Voltage
- Low Input Capacitance
- ESD Protected Gate
- Fast Switching Speed
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
- Case: SOT23
- Case Material: Molded Plastic, “Green” Molding pound. UL
Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Connections: See Diagram
- Terminals: Finish Matte Tin Annealed over...
