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DMN3200U - N-channel Enhancement Mode Field Effect Transistor

Key Features

  • Low On-Resistance.
  • 90mΩ @ VGS = 4.5V.
  • 110mΩ @ VGS = 2.5V.
  • 200mΩ @ VGS = 1.5V.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • ESD Protected Gate.
  • Fast Switching Speed.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: SOT23.
  • Case Material: Molded Plastic,.

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NEW PRODUC YM DMN3200U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance  90mΩ @ VGS = 4.5V  110mΩ @ VGS = 2.5V  200mΩ @ VGS = 1.5V • Low Gate Threshold Voltage • Low Input Capacitance • ESD Protected Gate • Fast Switching Speed • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SOT23 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections: See Diagram • Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 • Weight: 0.