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DMN3200U - N-channel Enhancement Mode Field Effect Transistor

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Diodes

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DMN3200U N-channel Enhancement Mode Field Effect Transistor by Diodes - Datasheet Preview — Datasheet preview – DMN3200U

Datasheet Details

Part number	DMN3200U
Manufacturer	DIODES
File Size	263.44 KB
Description	N-channel Enhancement Mode Field Effect Transistor
Datasheet	DMN3200U Datasheet
Additional preview pages of the DMN3200U datasheet.

Product details

Features

Low On-Resistance.
90mΩ @ VGS = 4.5V.
110mΩ @ VGS = 2.5V.
200mΩ @ VGS = 1.5V.
Low Gate Threshold Voltage.
Low Input Capacitance.
ESD Protected Gate.
Fast Switching Speed.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
Case: SOT23.
Case Material: Molded Plastic,.

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Published: Sep 16, 2013 |