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DMN4020LFDE - 40V N-Channel MOSFET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

General Purpose Interfacing Switch Power Management Functions U-DF

Key Features

  • 0.6mm Profile.
  • Ideal for Low Profile.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADVANCE INFORMATION Product Summary BVDSS 40V RDS(ON) max 20mΩ @ VGS = 10V 28mΩ @ VGS = 4.5V ID max TA = +25°C 8.0A 6.7A Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • General Purpose Interfacing Switch • Power Management Functions U-DFN2020-6 (Type E) DMN4020LFDE 40V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits • 0.6mm Profile – Ideal for Low Profile Applications • PCB Footprint of 4mm2 • Low Gate Threshold Voltage • Low On-Resistance • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free.